The MIIS Eprints Archive

A Mathematical Model for Epitaxial Semiconductor Crystal Growth from the Vapor Phase on a Masked Substrate

French, D.A. and Pelesko, J.A. and Braun, R. (1999) A Mathematical Model for Epitaxial Semiconductor Crystal Growth from the Vapor Phase on a Masked Substrate. [Study Group Report]

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Abstract

Certain materials used in lasers are made by a process called epitaxial semiconductor crystal growth. In this report a mathematical model is developed for this growth process which occurs on a substrate at the junction between a masked region and exposed substrate in a vapor. This new model consists of two partial differential equations; one for the surface dynamics and one for the crystal growth on the exposed substrate. An analysis of the steady state solutions is furnished. Approximate solutions for time-dependent cases are found using two numerical methods. An asymptotic analysis is also carried out to determine transient solution behavior. The undesireable "bump" structure at the mask/substrate junction which has been observed experimentally is present in the solutions found by each method.

Item Type:Study Group Report
Problem Sectors:Materials
Study Groups:US Workshop on Mathematical Problems in Industry > 15th MPI [Delaware 7/6/1999 - 11/6/1999]
ID Code:398
Deposited By:Dr Kamel Bentahar
Deposited On:30 Nov 2011 12:01
Last Modified:30 Nov 2011 12:01

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