Modelling of plasmas used for etching semiconductors

Budd, C.J. and Richardson, G. (2003) Modelling of plasmas used for etching semiconductors. European Study Group with Industry > 46th ESGI [Bristol 31/3/2003 - 4/4/2003].

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EPrint Type:	Study Group Report
Study Group:	European Study Group with Industry > 46th ESGI [Bristol 31/3/2003 - 4/4/2003]
Company Name:	Trikon
Industrial Sector:	None/Other
Additional Contributors:	Dellar, P. and Lacey, A.A. and Ockendon, J.R. and Shillor, M. and Weiss, J.
ID Code:	23
Deposited By:	Gordon White
Deposited On:	10 June 2004

Problem Statement

A process used by Trikon to etch a semiconductor comprises a plasma chamber in which radicals and electrons are produced through ionisation in a plasma. These then migrate onto a silicon wafer, leading to etching through chemical action. Power for this process comes from an external radiofrequency source which causes skin heating of the gas inside the chamber. The gas in the device is primarily oxygen, with a flow rate that can be controlled as part of the process. The main questions posed to the Study Group were how the process depends on the gas flow, the RF heating power and the gas pressure.

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