On compact models for high-voltage MOS devices

van Beckum, F.P.H. and Boersma, J. and Habets, L.C.G.J.M. and Meinsma, G. and Molenaar, J. and Schilders, W.H.A and van de Ven, A.A.F. (1999) On compact models for high-voltage MOS devices. European Study Group with Industry > 36th ESGI [Eindhoven 15/11/1999 - 19/11/1999].

Full text available as:

PDF - Requires Adobe Acrobat Reader or other PDF viewer.

Abstract/Summary

Fast evaluation of integrated circuits(ICs) requires the validity of so-called compact models, i.e. simple-to-evaluate relations between the voltages and the currents in the IC-components. In this paper the compact model for a particular IC part, the LDMOS device, is studied.

Archive Staff Only: edit this record